(Hong Kong)
Product Summary
The SGW50N60HS is a High Speed IGBT in NPT-technology.
Parametrics
Absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)DC collector current TC = 25℃: 100 A, TC = 100℃: 50 A; (3)Pulsed collector current, tp limited by Tjmax: 150 A; (4)Turn off safe operating area VCE ≤ 600V, Tj ≤ 150℃: 150 A; (5)Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25Ω; (6)start TJ=25℃: 280 mJ; (7)Gate-emitter voltage static: ±20 V, transient (tp<1μs, D<0.05): ±30 V; (8)Short circuit withstand time VGE = 15V, VCC ≤ 600V, Tj ≤ 150℃: 10 μs; (9)Power dissipation TC = 25℃: 416 W; (10)Operating junction and storage temperature: -55 to +150℃.
Features
Features: (1)30% lower Eoff compared to previous generation; (2)Short circuit withstand time-10 μs; (3)Designed for operation above 30 kHz; (4)NPT-Technology for 600V applications offers: parallel switching capability, moderate Eoff increase with temperature, very tight parameter distribution; (5)High ruggedness, temperature stable behaviour; (6)Pb-free lead plating; RoHS compliant; (7)Qualified according to JEDEC1 for target applications.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SGW50N60HS |
Infineon Technologies |
IGBT Transistors HIGH SPEED NPT TECH 600V 50A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SGW50N60HS |
Infineon Technologies |
IGBT Transistors HIGH SPEED NPT TECH 600V 50A |
Data Sheet |
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SGW5N60RUF |
Other |
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Data Sheet |
Negotiable |
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SGW5N60RUFD |
Other |
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Data Sheet |
Negotiable |
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SGW5N60RUFDTM |
Fairchild Semiconductor |
IGBT Transistors |
Data Sheet |
Negotiable |
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SGW5N60RUFTM |
Fairchild Semiconductor |
IGBT Transistors 600V/5A |
Data Sheet |
Negotiable |
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